Insulated-gate thyristor

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257148, 257154, H01L 2708, H01L 2974, H01L 29743

Patent

active

053810260

ABSTRACT:
Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.

REFERENCES:
patent: 4502070 (1985-02-01), Leipold et al.
patent: 4717940 (1988-01-01), Shinohe et al.
patent: 4760431 (1988-07-01), Nakagawa et al.
patent: 4914496 (1990-04-01), Nakagawa et al.
patent: 4990975 (1991-02-01), Hagino
IEDM Technical Digest, pp. 293-296 (1989); H-R Chang, et al. Dec. 3-6, 1989.
IEEE Electron Device Letters, vol. 11, No. 2, Feb., 1990; B. J. Baliga, pp. 75-77.
IEEE Transactions on Electron Devices, vol. ED-33, No. 10, Oct., 1986; Victor A. K. Temple; pp. 1609-1618.
Power Conversion, Oct., 1989 Proceedings; V. A. K. Temple, pp. 544-554.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Insulated-gate thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated-gate thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated-gate thyristor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-852958

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.