Threshold adjustment method for an IGFET

Details Threshold adjustment method for an IGFET Threshold adjustment method for an IGFET

1987-06-25

1989-07-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

357 2312, H01L 21322, H01L 2978

Patent

active

048450472

ABSTRACT:
Polysilicon gate insulated gate field effect transistors with threshold adjustment implants made after the gate oxide (156) and a split of the polysilicon gate (158) have been formed provides a shallow, tight dopant profile.

REFERENCES:
patent: 4336647 (1982-06-01), McElroy

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