Method of manufacturing a high density ROM

Details Method of manufacturing a high density ROM Method of manufacturing a high density ROM

1994-05-23

1995-01-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 45, 437 48, 437 46, H01L 2170

Patent

active

053806760

ABSTRACT:
A ROM is formed by depositing a first layer composed of a material selected from polysilicon and polycide on the substrate, patterning the first layer by masking and etching, depositing a dielectric layer over the first layer and patterning the dielectric layer and the first layer into the pattern of first conductor lines, forming a contact window through the dielectric layer down to the substrate, depositing a second layer composed of a material selected from polysilicon and polycide on the device and forming second conductor lines directed orthogonally to the first conductor lines formed from the first layer, and ion implanting into the substrate through the second layer to form a contact region electrically connected to the second conductor lines of the second layer.

REFERENCES:
patent: 4833514 (1989-05-01), Esquivel et al.
patent: 4898840 (1990-02-01), Okuyama
patent: 4904615 (1990-02-01), Okuyama et al.
patent: 5027175 (1991-06-01), Iwasa
patent: 5087584 (1992-02-01), Wada et al.
patent: 5091329 (1992-02-01), Bekkering et al.
patent: 5094971 (1992-03-01), Kanebako
patent: 5149664 (1992-09-01), Shin et al.
patent: 5242850 (1993-09-01), Tasaka
patent: 5264386 (1993-11-01), Yang
patent: 5270237 (1993-12-01), Sang et al.
patent: 5278078 (1994-01-01), Kanebako et al.
patent: 5306657 (1994-04-01), Yang
patent: 5308777 (1994-05-01), Hong
patent: 5330924 (1994-07-01), Huang et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a high density ROM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a high density ROM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a high density ROM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-850396