Optical semiconductor device for neural network

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

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257 85, 257 98, 372 50, 372 48, 395 24, 395 25, H01L 3112

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active

053939948

ABSTRACT:
An optical semiconductor device is disclosed which includes a semiconductor laser having at least an active layer, reflecting means formed on the semiconductor laser for reflecting internal feedback light generated from the semiconductor laser and at least two phototransistors formed on the reflecting means for detecting light having a wavelength substantially identical to that of laser light oscillated from the active layer.

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Shibata et al., "Monolithic Integration of an InGaAsP/InP Laser Diode with Heterojunction Bipolar Transistors," Appl. Phys. Lett. 45(3), 1 Aug. 1984, pp. 191-193.
Chen et al., "Vertical Integration of an InGaAsP/InP Heterojunction Bipolar Transistor and a Double Heterojunction Laser", Appl. Phys. Lett. 50(14), 6 Apr. 1987, pp. 874-876.
Matsueda et al., "Integration of a Laser Diode and a Twin FET", Proceedings of the 12th Conference on Solid State Devices, Tokyo 1980, Japanese Journal of Applied Physics, vol. 20, Supplement 20-1, 1981, pp. 193-197.
Y. Nitta et al., "Optical Neurochip with Learning Capability", IEEE Photonics Technology Letters, vol. 4, No. 3, pp. 247-249, Mar. 1992.
S. Noda et al., "Optical Amplification and Switching Devices by Integration of Optoelectronic Devices", Institute of Electronics, information and communication Engineers Technical Report, OQE-91-53, pp. 45-50, Jul. 26, 1991.

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