Method and manufacturing a laser diode with buried active layer

Fishing – trapping – and vermin destroying

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437122, 437129, 437133, 437905, 148DIG101, 148DIG99, H01L 2120, H01L 21208

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active

049635077

ABSTRACT:
In the manufacture of laser diodes having a stripe-shaped, active layer, a problem arises upon application of lateral layers, particularly of blocking pn-junctions for lateral current conduction, in that these layers are undesired above the active layer. By applying a protective cover layer that will dissolve in super-cooled melts of the material of the lateral layers, before the growth of the lateral layers, the growth of the lateral layers, particularly blocking pn-junctions, above the active stripe is avoided since the cover layer dissolves in the melt given epitaxial application of the lateral layers.

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K. Nakajima et al., Liquid Phase Epitaxial Growth Conditions of Lattice-Matched In.sub.l-x Ga.sub.x As.sub.1-y P.sub.y Layers on (III)A and (III)B InP, Journal of Crystal Growth 71 (1985), pp. 463-469.
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