Process for forming low dielectric constant insulation layer on

Details Process for forming low dielectric constant insulation layer on Process for forming low dielectric constant insulation layer on

1993-06-28

1995-02-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437919, 437978, 437235, H01L 2102

Patent

active

053937120

ABSTRACT:
A process is described for forming a low dielectric constant insulation layer on an integrated circuit structure on a semiconductor wafer by first forming a composite layer, comprising one or more extractable materials and one or more matrix-forming insulation materials, over an integrated circuit structure on a semiconductor wafer, and then selectively removing the extractable material from the matrix-forming material without damaging the remaining matrix material, thereby leaving behind a porous matrix of the insulation material. In one embodiment, the composite layer is formed from a gel. The extractable material is removed by first dissolving it in a first liquid which is not a solvent for the matrix-forming material to form a solution. This solution is then removed from the matrix-forming material by rinsing the matrix in a second liquid miscible with the first solvent and which also is not a solvent from the matrix-forming material. The second liquid is then preferably removed from the matrix-forming material either by lyophilizing (freeze drying) or by raising the pressure and temperature above the critical point of the second liquid.

REFERENCES:
Instability of a Ge.sub.x Si.sub.1-x O.sub.2 Film on a Gephd xSi.sub.1-x Layer, pp. 4444-4446, Journal of Applied Physics vol. 72, No. 9, Nov. 1, 1992.
Hawley, The Condensed Chemical dictionary p. 398, copyright 1977.
Wolf, Silicon Processing for VLSI Era vol.-1 Process Integration p. 226, copyright 1986.
Wolf, Silicon Processing for VLSI Era, vol.-2, process integration of pp. 106-105 and 196-198, copyright 1990.

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