Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1981-02-02

1984-05-15

Larkins, William D.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 22, 357 42, 365149, 365150, H01L 2704, G11C 1140

Patent

active

044491425

ABSTRACT:
A semiconductor memory device comprises a gate electrode provided via a gate insulating film on a semiconductor layer formed on a substrate and two diffused semiconductor regions provided to form a field effect transistor together with the gate electrode. An electrical charge is supplied to one of the diffused regions from the other region to thereby vary a width of a space charge layer appearing around the one diffused region so that informations "1" and "0" are selectively stored in the device. The stored information is read-out by detecting presence or absence of a buried channel between the space charge layer and the substrate.

REFERENCES:
patent: 3639813 (1972-02-01), Kamoshida et al.
patent: 3918070 (1975-11-01), Shannon
patent: 4074302 (1978-02-01), Brewer
patent: 4161741 (1979-01-01), Collet et al.
patent: 4291391 (1981-09-01), Chatterjee et al.
Lee, IBM Tech. Disclosure Bulletin, vol. 19, No. 11, Apr. 1977, pp. 4103-4105.
Chang et al., IBM Tech. Disclosure Bulletin, vol. 16, No. 1, Jun. 1973, p. 255.
Electronics, Apr. 1, 1976, pp. 74-81.
Koyanagi et al., IEEE Int. Electron Dev. Meeting, Technical Digest, Dec. 3, 1978, pp. 348-351.
IEEE Journal of Solid-State Circuits, vol. SC-7, No. 5, Oct. 1972, pp. 336-340.

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