Recessed side-wall poly plugged local oxidation

Details Recessed side-wall poly plugged local oxidation Recessed side-wall poly plugged local oxidation

1993-07-28

1995-02-28

Fourson, George

Fishing, trapping, and vermin destroying

437 72, H01L 2176

Patent

active

053936922

ABSTRACT:
A method of forming a field oxide isolation region with reduced bird's beak length and planar topography is described. A first layer of pad oxide is formed on the surface of a silicon substrate. A layer of silicon nitride is formed on the surface of the first pad oxide layer. The silicon nitride layer and part of the first pad oxide layer are patterned to form an opening for the field oxide isolation region. The first pad oxide layer is removed in the area defined by the opening and simultaneously a cavity is formed in the first pad oxide layer under the silicon nitride. A second pad oxide layer is formed by oxidizing the exposed portions of the silicon substrate and the first pad oxide layer. A layer of polysilicon is deposited over the surfaces of the second pad oxide layer and the silicon nitride layer, and inside the cavity. The polysilicon layer is etched to form a polysilicon spacer adjacent to the silicon nitride layer and a polysilicon plug in the cavity. The field oxide isolation region is then formed in and on the silicon substrate. The silicon nitride layer and the remainder of the first pad oxide layer are removed. A sacrificial oxide layer is formed on the surface of the substrate, and is then removed to complete formation of the field oxide.

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Ghezzo, M., "LOPOS: Advanced Device Isolation for a 0.8 .mu.m CMOS/BULK Process Technology", Journal of the Electrochemical Society, vol. 136, No. 7, Jul./1989 pp. 1992-1996.
"Polysilicon Encapsulated Local Oxidation" by S. S. Roth et al. in IEEE Electron Device Letters, vol. 12, No. 3, Mar. 1991.

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