Process for forming a static-random-access memory cell

Details Process for forming a static-random-access memory cell Process for forming a static-random-access memory cell

1994-02-28

1995-02-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 48, 437 60, 437 47, H01L 2170

Patent

active

053936892

ABSTRACT:
An SRAM cell is formed such that pass channel-stop regions, which are adjacent to the pass transistors, have a higher doping concentration compared to the latch channel-stop regions that are adjacent to the latch transistors. In one embodiment, the pass channel-stop regions are formed using two channel-stop doping steps, whereas the latch channel-stop regions are formed during only one channel-stop doping step. The doping steps may be performed before or after field isolation is formed. The higher doping concentration causes the dopant from the pass channel-stop regions to extend laterally further from the edge of the field isolation compared to the latch channel-stop regions. The process can be adapted for use in almost any type of field isolation process.

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Ohkubo, et al.; "16 Mbit SRAM Cell Technolgies for 2.0V Operation;" IEDM; pp. 481-484 (1991).
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U.S. Ser. No. 07,983,347, Hayden, et al., Nov. 30, 1992.

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