Method for making collector arrangement for magnetotransistor

Details Method for making collector arrangement for magnetotransistor Method for making collector arrangement for magnetotransistor

Filed on

1994-05-18

Date issued

1995-02-28

Examiner

Chaudhuri, Olik

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

437 32, 324252, H01L 21265

Type

Patent

Status

active

Patent number

053936787

Description

ABSTRACT:
A collector arrangement for a magnetotransistor (10, 25, 30) and a method for making the magnetotransistor (10, 25, 30). A portion of a semiconductor substrate (11) is doped to form a base region (13). The base region is doped to form an emitter region (16, 26, 36) and a collector region (17, 27, 37) such that the collector region (17, 27, 37) surrounds and is spaced apart from the emitter region (16, 26, 36). Collector contacts (C.sub.1 -C.sub.8 and C.sub.5 '-C.sub.8 ', C.sub.13 -C.sub.16) are symmetrically formed in the collector region (17, 27, 37). In a three-dimensional magnetotransistor (10, 25) the collector contacts include split-collector contacts (C.sub.5 -C.sub.8 and C.sub.5 '-C.sub.8 ').

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LJ. Ristic et al, "3-D Magnetic Field Sensor Realized as a Lateral Magnetotransistor in CMOS Technology," Sensors and Actuators, A21-A23 (1990) 770-775.
Lj. Ristic et al, "2-D Integrated Magnetic Filed Sensor in CMOS Technology," Bipolar Circuits and Technology Meeting, 1989, p. 701.

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