Patent
1990-10-01
1992-07-21
Prenty, Mark
357 31, 357 32, 357 67, 357 71, H01L 2714, H01L 2348
Patent
active
051327619
ABSTRACT:
Method of manufacturing an infrared detector having a refractory metal (16) within the metal-insulator-semiconductor structure (MIS) provides a process applicable for high volume production of infrared focal plane array detectors. The process of the present invention uses a refractory metal such as tantalum as the gate (16) which is less susceptible to the etching by the bromine solution used to etch the vias (22) as compared to aluminum. Additionally, the etching of the refractory metal film to form the MIS structure can be done with a fluorine-containing plasma, thus avoiding the corrosion of the metal associated with etching aluminum metal films in a chlorine-containing plasma.
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Hutchins Larry D.
Luttmer Joseph D.
Orent Thomas W.
Simmons Art
Wan Chang F.
Donaldson Richard L.
Grossman Rene E.
Prenty Mark
Texas Instruments Incorporated
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