Solid-state imaging device in which reverse bias voltage is auto

Details Solid-state imaging device in which reverse bias voltage is auto Solid-state imaging device in which reverse bias voltage is auto

1990-06-28

1992-07-21

James, Andrew J.

Electrical pulse counters, pulse dividers, or shift registers: c

Counting or dividing in incremental steps

Beam type tube

357 30, 377 59, 377 60, 377 61, 377 62, 377 63, H01L 2978, H01L 2714, H01L 3100

Patent

active

051327597

ABSTRACT:
A solid-state imaging device includes on a semiconductor substrate of a first conductivity type, a well of the opposite conductivity type and, in addition, a plurality of light-sensitive elements formed in the well. A reverse bias voltage applied to the semiconductor substrate with respect to the well causes charge stored in the light-sensitive elements less than or equal to a potential barrier voltage to leak out into the semiconductor substrate. On the substrate a detection circuit detects the resistance of the semiconductor substrate and a setting circuit sets the reverse bias voltage in such a manner as to keep the potential barrier voltage constant, based on the resistance detected by the detection circuit.

REFERENCES:
patent: 4665325 (1987-05-01), Yamada et al.
patent: 4717945 (1988-01-01), Yusa et al.
patent: 4748486 (1988-05-01), Miyatake
patent: 4851890 (1989-07-01), Miyatake
patent: 4977584 (1990-11-01), Kohno et al.

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