Method for forming a patterned layer by selective chemical vapor

Details Method for forming a patterned layer by selective chemical vapor Method for forming a patterned layer by selective chemical vapor

1991-06-19

1995-02-28

Bell, Janyce

Coating processes

Direct application of electrical, magnetic, wave, or...

Chemical vapor deposition

156643, 427 99, 427252, 427282, 427287, 427314, B05D 306

Patent

active

053935772

ABSTRACT:
In a method for forming a patterned layer by the selective CVD, the material gas for forming a patterned layer is introduced into a CVD chamber in which a semiconductor substrate is set, and then the CVD process is carried out at a predetermined temperature of the substrate while a light having a predetermined wavelength is irradiated selectively through a mask having a predetermined pattern on the substrate. The CVD layer grows on the area of the surface of the substrate where the light is not irradiated, however, the CVD growth is hindered on the area where the light is irradiated, by the presence of a thin layer which prevent the CVD growth, for example.

REFERENCES:
patent: 3206326 (1955-09-01), Whaley et al.
patent: 4328261 (1982-05-01), Heinecke et al.
patent: 4716050 (1987-12-01), Green et al.
patent: 5364681 (1991-11-01), Berry et al.

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