Ion implantation apparatus

Details Ion implantation apparatus Ion implantation apparatus

1990-08-16

1992-07-21

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37304

Patent

active

051325454

ABSTRACT:
An ion implantation apparatus includes an ion source having an arc chamber generating ions and a drawing electrode drawing ions from the arc chamber, a mass separator transporting only ions desired for implantation, an ion implantation chamber in which the material to be implanted by ions is placed, and a controller means for automatically controlling the distance between the arc chamber and the drawing electrode incrementally in accordance with a theoretical calculation using normalized perveance considering the kind of ions to be implanted, the accelerating voltage, and the ion current and current density distribution.

REFERENCES:
patent: 4017403 (1917-04-01), Freeman
patent: 4667111 (1987-05-01), Glavish
patent: 4804879 (1989-02-01), Fukumoto
patent: 5025167 (1991-06-01), Okuda et al.
Satoh et al., "Ion Beam System for the New High Current Ion Implantation System Extrion-1000", Nuclear Instruments and Methods in Physics Research, Section B, vol. 37/38, No. 2, Feb. 1989, pp. 612-615.
Wilson et al., "Ion Beams . . . Ion Implantation", Robert E. Krieger Publishing Company, 1973.
Ishikawa, "Ion Source Engineering", no translation.

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