Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1990-08-29
1992-07-21
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250348, 335210, 335213, H01J 37317
Patent
active
051325446
ABSTRACT:
System for irradiating the surface of a substrate with atomic or molecular ions by rapid scanning of a beam in two dimensions over the surface of the substrate. A scanning system is shown for deflecting the beam in two dimensions relative to a reference axis and a magnetic ion beam transport system following the scanning system is arranged to receive the beam from the scanning system over the range of two dimensional deflections of the scanning system and constructed to impose magnetic field conditions along the beam path of characteristics selected to reorient the two-dimensionally deflected beam to a direction having a predetermined desired relationship with the axis in the two dimensions at the desired instantaneous two dimensional displacement of the beam from the axis, to produce the desired scan of the beam over the substrate. One scanning system includes sequential first and second time-variable-field magnetic scanners, the first scanner having a magnetic gap of volume smaller than that of the second scanner and constructed to scan the beam more rapidly than the second scanner. In another system, the scanners are superposed. The magnetic ion beam transport system presently preferred is a system producing a sequence of three or more quadrupole fields, implemented by a sequence of quadrupoles. Alternate structures are disclosed. The system is capable of depositing atomic or molecular ions with a desired angular and positional uniformity over a wide range of perveance including perveance above 0.02/M[amu].sup.1/2 (mA//keV.sup.3/2) with a constant, adjustable spot size and small beam spread.
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Berman Jack I.
Nissin Electric Company Ltd.
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