Metal fusion bonding – Process – Using only pressure
Patent
1989-09-25
1990-10-16
Ramsey, Kenneth J.
Metal fusion bonding
Process
Using only pressure
228191, 228903, 1563063, 156281, 437246, H01L 2130
Patent
active
049628798
ABSTRACT:
A method for bubble-free bonding of silicon wafers to silicon wafers or silicon wafers to quartz wafers either outside or inside a Clean Room. The method includes the steps of positioning wafers in closely spaced-apart and parallel relationship to each other in a rack or the like with mirror-polished surfaces of the wafers facing each other, cleansing the mirror-polished surfaces with a hydrophilization cleansing solution, flushing the cleansing solution from the mirror-polished surfaces of the wafers with deionized water, drying the wafers in a spin-dryer, and moving the wafers together so that contact occurs between opposing mirror-polished surfaces of the wafers and bonding occurs. The bonded wafers are then placed into a wafer shipping and storing container for improved wafer storage performance.
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Shimbo, et al.; "Silicon-to -Silicon Direct Bonding Method"; 10/15/86; Journal of Applied Physics, vol. 60, No. 8, pp. 2987-2989.
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Lasky; "Wafer Bonding for Silicon-on-Insulator Technologies"; 1/6/86; J of App Phys, vol. 48, No. 1, pp. 78-80.
Goesele Ulrich M.
Lehmann Volker
Duke University
Jenkins Richard E.
Ramsey Kenneth J.
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