Power semiconductor module

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Details

357 74, 357 75, 357 79, H01L 3902

Patent

active

047664819

ABSTRACT:
A power semiconductor module includes a multi-layered substrate formed of a first ceramic bottom plate, at least one second ceramic plate disposed above and parallel to the first ceramic bottom plate, a metal foil in the form of a textured metallization located between and directly bonded to the ceramic plates, the second ceramic plate having cutouts formed therein, and assembly elements soldered in the cutouts.

REFERENCES:
patent: 3994430 (1976-11-01), Cusano et al.
patent: 4338621 (1982-07-01), Braun
patent: 4387388 (1983-01-01), Zakhariyz
patent: 4488167 (1984-12-01), Neidig et al.
patent: 4513355 (1985-04-01), Schroeder et al.
patent: 4639759 (1987-01-01), Neidig et al.

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