Method of driving a thin film transistor type optical sensor and

Details Method of driving a thin film transistor type optical sensor and Method of driving a thin film transistor type optical sensor and

1991-03-26

1993-02-02

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

35821331, H01J 4014

Patent

active

051840073

ABSTRACT:
The present invention relates to a method of driving a thin film transistor type optical sensor, having a gate electrode, a gate insulating layer, a thin film semiconductor layer, an ohmic contact layer, a source electrode and a drain electrode.
The thin film transistor type optical sensor is driven by providing the gate electrode with a threshold voltage for a thin film transistor provided adjacent to the thin film transistor type optical sensor or a voltage based on the threshold voltage.

REFERENCES:
patent: 4945418 (1990-07-01), Mutoh
patent: 4980546 (1990-12-01), Berger
The Japan Society Of Applied Physics, Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Aug. 27, 1987, pp. 509-510, Saika, T., et al.: "Integrated a-Si:H Linear Image Sensor Using TFT Type Photo-Sensor".

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