Semiconductor substrate and method for producing the same

Details Semiconductor substrate and method for producing the same Semiconductor substrate and method for producing the same

1990-08-21

1991-12-17

Hille, Rolf

357 55, 357 71, H01L 2936, H01L 2354, H01L 2122

Patent

active

050738151

ABSTRACT:
A semiconductor substrate that comprises: a base plate member made from a dielectric material; a refractory metal film covering at least a part of the base plate member; a single crystal semiconductor film formed on the refractory metal film; and an impurities-diffusion layer formed in said single crystal semiconductor film in a side contacting with the refractory metla film. The diffusion layer has a density grade gradually decreasing toward a direction away from the refractory metal film so that this impurities-diffusion layer comes in ohmic contact with the refractory metal film.

REFERENCES:
patent: 4292730 (1981-10-01), Ports
patent: 4472729 (1984-09-01), Shibata et al.
patent: 4717681, Curran
patent: 4819037 (1989-04-01), Sakakibara et al.
patent: 4939568 (1990-07-01), Kato et al.

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