Integratable power transistor with optimization of direct second

Details Integratable power transistor with optimization of direct second Integratable power transistor with optimization of direct second

1990-06-20

1991-12-17

James, Andrew J.

357 36, 357 46, 357 51, 357 86, H01L 2972, H01L 2702

Patent

active

050738119

ABSTRACT:
An integratable power transistor with optimization of direct secondary breakdown phenomena which comprises a plurality of elementary transistors which are arranged side by side and comprise a plurality of cells, each of which is formed by an emitter reigon surrounded by base and collector regions, with the emitter regions arranged physically separated. According to the invention, the base regions are also arranged physically separated and are mutually connected by resistive elements.

REFERENCES:
patent: 3990092 (1976-11-01), Yoshimura
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patent: 4682197 (1987-07-01), Villa et al.
patent: 4800416 (1989-01-01), Musemeci
patent: 4942308 (1990-07-01), Conzelmann et al.
patent: 4947231 (1990-08-01), Palara et al.
patent: 4949139 (1990-08-01), Korsh et al.
patent: 4949153 (1990-08-01), Hirao et al.

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