Sputtering titanium target assembly and producing method thereof

Details Sputtering titanium target assembly and producing method thereof Sputtering titanium target assembly and producing method thereof

1996-11-27

1998-09-15

Wyszomierski, George

Metal treatment

Process of modifying or maintaining internal physical...

Producing or treating layered, bonded, welded, or...

228193, B23K 2002

Patent

active

058074430

ABSTRACT:
A cold-worked titanium material subjected to isostatic material and a backing plate are brought into contact with each other and subsequently hot-pressing. By such working the titanium material and the backing plate are bonded with each other by mutual diffusion and simultaneously the titanium material is recrystallized. The isostatic pressing is performed under a pressure of 50 to 200 MPa at a temperature of 300.degree. to 450.degree. C. The surface of the titanium material is preferably subjected to a surface roughening treatment to provide with a roughness level of 6S to 12S prior to the isostatic pressing.

REFERENCES:
patent: 4025036 (1977-05-01), Melnyk
patent: 4732312 (1988-03-01), Kennedy et al.
patent: 4896815 (1990-01-01), Rosenthal et al.
patent: 5562999 (1996-10-01), Grunke et al.
Japanese Industrial Standard, Surface Roughness, JIS B 0601-1476, revised Jun. 1982.

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