Method of making a high frequency semiconductor package

Details Method of making a high frequency semiconductor package Method of making a high frequency semiconductor package

1975-02-10

1976-03-09

James, Andrew J.

Wave transmission lines and networks

Automatically controlled systems

With control of equalizer and/or delay network

357 68, 357 69, 357 71, 357 81, 333 84M, H01L 2302, H01L 2312

Patent

active

039435563

ABSTRACT:
A method for manufacturing a low cost high frequency transistor package including a metal header, a metallized apertured ceramic insulator affixed to the header, a metallized beryllia insulator, and two cylindrical bonding rails within the aperture of the ceramic insulator attached to the header. The two bonding rails may be segments of wire. Metal leads are attached to the ceramic insulator. A very low inductance path through the bonding rails to the header results. The method includes positioning a first solder preform on the header, positioning the metallized, apertured ceramic insulator on the first preform, positioning the metallized beryllia insulator and the plated wire segments which form the bonding rails within the aperture of the first preform, positioning second and third preforms on the apertured ceramic insulator metallization, positioning the leads on said second and third preforms, and heating the package in a suitable atmosphere to a temperature above the melting point of the preforms to fuse the parts into a unit.

REFERENCES:
patent: 3626259 (1971-12-01), Garboushian
patent: 3641398 (1972-02-01), Fitzgerald
patent: 3681513 (1972-08-01), Hargis
patent: 3713006 (1973-01-01), Litty et al.
patent: 3753056 (1973-08-01), Cooke
patent: 3769560 (1973-10-01), Miyake
patent: 3784883 (1974-01-01), Duncan et al.
patent: 3784884 (1974-01-01), Zoroglu
patent: 3786375 (1974-01-01), Sato et al.

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