Threshold switching integrated circuit and method for forming th

Details Threshold switching integrated circuit and method for forming th Threshold switching integrated circuit and method for forming th

1975-02-10

1976-03-09

Miller, Jr., Stanley D.

Metal treatment

Stock

Ferrous

148 15, 357 12, 357 13, 357 15, 357 40, 357 65, 357 91, H01L 2972

Patent

active

039435547

ABSTRACT:
A high speed threshold switching integrated circuit including a transistor and an integrally formed tunnel diode connected in parallel between the base and emitter of the transistor. The heavy doping necessary for the tunnel diode is achieved through the use of ion implantation. A current pulse applied to the emitter-base contact of the integrated circuit causes no collector current to flow until the point at which the rising current pulse exceeds the peak current of the tunnel diode. As the tunnel diode goes into the negative resistance region the transistor is turned on and rapidly pushed into near saturation with a consequent rapidly rising collector current.

REFERENCES:
patent: 3079512 (1963-02-01), Rutz
patent: 3434023 (1969-03-01), Lesk
patent: 3463975 (1969-08-01), Biard
patent: 3513366 (1970-05-01), Clark
patent: 3751680 (1973-08-01), Hodges
patent: 3810127 (1974-05-01), Hoff

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