Low interelectrode leakage structure for charge-coupled devices

Details Low interelectrode leakage structure for charge-coupled devices Low interelectrode leakage structure for charge-coupled devices

1975-05-22

1976-03-09

Larkins, William D.

357 59, H01L 2978, H01L 2904

Patent

active

039435458

ABSTRACT:
A charge-coupled device having a semiconductor substrate, a layer of insulation covering the substrate, and a plurality of spaced-apart electrodes formed from a doped, polycrystalline semiconductor material of a particular conductivity type includes regions of interelectrode material doped with an impurity of a conductivity type opposite to said particular conductivity type.

REFERENCES:
patent: 3728590 (1973-04-01), Kim et al.
patent: 3836409 (1974-09-01), Amelio et al.
Radio-Electronics, Aug. 1973, pp. 56-57.

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