Method of growing heteroepitaxial InP on Si using Sn substrate i

Details Method of growing heteroepitaxial InP on Si using Sn substrate i Method of growing heteroepitaxial InP on Si using Sn substrate i

1986-12-02

1988-08-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437107, 437110, 437133, 437976, 156610, 156613, 148DIG72, 148DIG97, 148DIG119, 357 16, 357 60, 357 91, H01L 2120, H01L 738, H01L 754

Patent

active

047660929

ABSTRACT:
When a semiconductor device is produced by growing epitaxially a compound semiconductor layer on a Si or Ge substrate, lattice matching between the substrate crystal and the compound semiconductor layer to be formed on the substrate can be improved by ion-implanting an ion species element, which increases the lattice constant of Si or Ge as the substrate, into the Si or Ge substrate in order to increase its lattice constant. In comparison with conventional semiconductor devices using Si or Ge into which ion implantation is not made, the semiconductor device produced by the method described above can improve remarkably its characteristics. In the case of a semiconductor laser device, for example, its threshold value drops drastically and its service life can be prolonged remarkably.

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patent: 4622093 (1986-11-01), Tsang
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