Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor
Patent
1974-11-11
1976-03-09
Rolinec, R. V.
Electricity: measuring and testing
Measuring, testing, or sensing electricity, per se
With rotor
324 60C, 324158D, 324158T, G01R 2900, G01R 3100
Patent
active
039434427
ABSTRACT:
Trap densities in dielectric films can be determined by tunnel injection measurements when the film is incorporated in an insulated-gate field-effect transistor (IGFET). Under applied bias to the transistor gate, carriers (electrons or holes) tunnel into traps in the dielectric film. The resulting space charge tends to change channel conductance. By feeding back a signal from the source contact to the gate electrode, channel conductance is held constant, and by recording the gate voltage as a function of time, trap density can be determined as a function of distance from the dielectric-semiconductor interface. The process is repeated with the gate bias voltage at different levels in order to determine the energy distribution of traps as a function of distance from the interface.
REFERENCES:
patent: 3859595 (1975-01-01), Lang
Lutz, O. P.; "A Semiautomatic Test . . . ;" Solid State Technology; Apr., 1969; pp. 39-43.
Fletcher James C. Administrator of the National Aeronautics and Space
Maserjian Joseph
Grifka Wilfred
Karlsen Ernest F.
Manning John R.
Mott Monte F.
Rolinec R. V.
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