Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1990-01-18

1991-12-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 2, 437 5, 437182, 437187, 148DIG120, 148DIG153, H01L 2160, H01L 21302

Patent

active

050735209

ABSTRACT:
Semiconductor layers having a p-n junction are formed over the surface of a semiconductor substrate except for a partial surface. On the partial surface of the semiconductor substrate, a region of an electrode to be connected with an external terminal is formed with an insulating film interposed between the same. Bonding connection with the external terminal is performed on the region for connection, to reduce mechanical damage of the semiconductor layers having the p-n junction while improving photoelectric conversion efficiency and reliability of the device.

REFERENCES:
patent: 3577175 (1971-05-01), Gri et al.
patent: 3686036 (1972-08-01), Gereth et al.
patent: 4278473 (1981-07-01), Borden
patent: 4286278 (1981-08-01), Lorenze, Jr. et al.
patent: 4377904 (1983-03-01), Chapman et al.
patent: 4525732 (1985-06-01), Bayraktaroglu
patent: 4532699 (1985-08-01), Bourdillot et al.
patent: 4774205 (1988-09-01), Choi et al.
"2.times.2-cm.sup.2 GaAs Space Solar Cells with 21% Conversion Efficiency", IEEE 18th Photovoltaic Specialists Conference, 1985, pp. 300-303.
"Reverse Bias and Assembly Tolerance of Liquid Phase Epitaxy GaAs Cells", 22nd Intersociety Energy Conversion Eng. Conf. pp. 64-69.
U.S. Journal: Crystal Research and Technology, vol. 16, No. 9, 1981, pp. 989-994.
U.S. Journal: Appl. Phys. Lett., vol. 32, 1978, pp. 376-378.

Affiliated with

Also associated with

Rating

Method of making a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-835509