Semiconductor programmable memory device

Details Semiconductor programmable memory device Semiconductor programmable memory device

1989-07-05

1990-05-01

James, Andrew J.

357 4, 357 236, 357 41, 357 49, H01L 2702, H01L 2978, H01L 2712

Patent

active

049223194

ABSTRACT:
A field programmable device such as a PROM in which a memory cell is formed from a series connection of a capacitor and a diode or FET. Programming is performed by forming a short circuit in an insulation film of the capacitor due to electrical breakdown of the capacitor. The capacitor is formed of first and second semiconductor layers and an insulation film between the two layers. The instability of short circuits due to further oxidation of the insulation film is avoided by the above described structure. The memory stored in the device is stabilized, and the reliability of the device is increased. The insulation film of the capacitor is oxidized or nitrided by ion implantation of oxygen or nitrogen into the semiconductor substrate, or polycrystalline material.

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