1988-11-09
1990-05-01
Jackson, Jr., Jerome
357 16, 357 4, H01L 29205, H01L 2972
Patent
active
049223143
ABSTRACT:
Current flow through the base region of a hot charge-carrier transistor is by hot majority charge-carriers (i.e. hot electrons for a hot electron transistor) which are collected at a base-collector barrier. This barrier may be formed by a semiconductor region which is doped with an impurity of the opposite conductivity type (p type for a hot electron transistor) and which is sufficiently thin as to form a bulk unipolar diode with an adjacent part of the base region. In accordance with the invention, one or more layers of wider-bandgap semiconductor material (for example, gallium aluminum arsenide) are present within the collector region (for example, of gallium arsenide) to form one or possibly even a series of heterojunctions each providing an electric field which retards the hot charge-carriers in the collector region. The retarding field cools the hot charge-carriers after collection so reducing a tendency to create electron-hole pairs by ionization. By spacing the first heterojunction from the base-collector barrier, a high collector field is maintained in the narrow bandgap material in the immediate vicinity of the potential maximum of the collector barrier, thus maintaining a high collection efficiency.
REFERENCES:
patent: 4665412 (1987-05-01), Ohkawa et al.
patent: 4682196 (1987-07-01), Sakai et al.
patent: 4758870 (1988-07-01), Hase et al.
Biren Steven R.
Jackson, Jr. Jerome
U.S. Philips Corp.
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