Process for producing silicon-containing deposit film

Details Process for producing silicon-containing deposit film Process for producing silicon-containing deposit film

1984-07-06

1985-11-19

Childs, Sadie L.

Coating processes

Coating by vapor, gas, or smoke

427 86, 4272551, C23C 1100, C23C 1300

Patent

active

045541809

ABSTRACT:
A process for producing silicon-containing deposit films which comprises introducing a cyclic silane represented by the general formula (SiH.sub.2).sub.n, wherein n is 4, 5, or 6, in the gaseous state together with a carrier gas into a deposition chamber and applying heat to the introduced gases at ordinary pressure to decompose the cyclic silane and form a silicon-containing deposit film on a substrate placed in the deposition chamber.

REFERENCES:
patent: 4027053 (1977-05-01), Lesk
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4495218 (1985-01-01), Azuma et al.
Scott et al, "Kinetics & Mechanism of Amorphous Hydrogenated Silicon Growth by Homogeneous Chemical Vapor Deposition", Appl. Phys. Lett., vol. 39, No. 1, pp. 73-75, Jul. 1, 1981.

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