Reference voltage generating circuit for a semiconductor device

Details Reference voltage generating circuit for a semiconductor device Reference voltage generating circuit for a semiconductor device

1991-07-24

1993-08-24

Beha, Jr., William H.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

313314, 313907, 257499, G05F 322

Patent

active

052392562

ABSTRACT:
First and second P-regions are disposed in N-wells to form first and second PN junctions. The area of the second PN junction is greater than that of the first PN junction. The N-wells and the first and second P-regions are connected between the power supply level for and the ground level, thereby generating a potential difference between the first and second P-regions. This potential difference has a positive temperature coefficient, which is amplified to be supplied as a reference voltage.

REFERENCES:
patent: 4672304 (1987-06-01), Degrauwe et al.
patent: 4796174 (1989-01-01), Nadd
patent: 5063342 (1991-11-01), Hughes et al.

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