Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

1998-06-25

1999-12-07

Mai, Son

Static information storage and retrieval

Floating gate

Particular biasing

36518503, 257316, 257321, G11C 1604, H01L 29788

Patent

active

059994533

ABSTRACT:
A nonvolatile semiconductor memory includes a memory cell constituted by at least first and second floating gates, first and second control gates, and a source and a drain. The first floating gate is formed on a semiconductor substrate through a gate insulating film. The second floating gate is formed on a region without the first floating gate via the gate insulating film. The first control gate is formed on the first floating gate via an insulating film. The second control gate is formed on the second floating gate via the insulating film. The source and the drain are formed in the semiconductor substrate to sandwich the first and second floating gates.

REFERENCES:
patent: 5739568 (1998-04-01), Kojima
patent: 5753950 (1998-05-01), Kojima
patent: 5798548 (1998-08-01), Fujiwara
M. Ohkawa, et al., "TP 2.3: A 08mm.sup.2 3.3V 64Mb Flash Memory With FN-NOR Type 4-level Cell", IEEE, Feb. 8, 1996, pp. 36-37.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-831567