Method and apparatus for making layered amorphous semiconductor

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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136258, 427 38, 427 39, 427 85, 427 86, B05D 302, B05D 306, B05D 512

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045214476

ABSTRACT:
An apparatus and process utilizes microwave energy for depositing amorphous alloy materials in layered form onto a receiving surface. The process results in materials having unique properties suitable for many applications including photovoltaic applications. The process includes the steps of providing at least one source of microwave energy, providing at least two reaction gases, each gas containing at least one alloying element to be deposited onto the receiving surface, and selectively exciting the reaction gases with microwave energy to create excited species containing the alloying elements to be deposited for depositing the alloys in alternating layers onto the receiving surface. For depositing alternating layers of silicon and germanium alloys, the reactions gases can include silane (SiH.sub.4) or silicon tetrafluoride (SiF.sub.4), and germane (GeH.sub.4) or germanium tetrafluoride (GeF.sub.4). In accordance with one disclosed embodiment, the reaction gases are excited separately with the excited species therefrom being sequentially introduced to the receiving surface for layered deposition. In accordance with another disclosed embodiment, the reaction gases are premixed to form a mixture and thereafter, the reaction gases are selectively excited in a plasma which is moved back and forth in the direction of flow of the reaction gas mixture to form selective excited species. Layered deposition results as a consequence of both the selective depletion of one alloying element bearing species from the gas mixture flow and from the motion of the plasma excitation zone relative to the receiving surface.

REFERENCES:
patent: 4282267 (1981-08-01), Kuyel
patent: 4379943 (1983-04-01), Yang et al.
Brodsky, M. H. et al., IBM Technical Disclosure Bulletin, vol 22, No. 8A, Jan. 1980.
C. Mailhiut et al., Electrical and Compositional Heterogeneity of Amorphous Si:H Films, Journal of Non-Crystalline Solids, 35 & 36, pp. 207-212, 1980.
Cohen, Charles, Thin Si Films Can Form at Room Temperature, Electronics, Nov. 3, 1981, pp. 82, 84.

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