Structure of complementary bipolar transistors

Details Structure of complementary bipolar transistors Structure of complementary bipolar transistors

1995-07-12

1999-09-21

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257588, 257511, H01C 2900, H01C 27082, H01C 27102

Patent

active

059557753

ABSTRACT:
A complementary bipolar transistor device, made of two separate conductive films such as two highly doped polysilicon films of opposite conductivity types. The doped polysilicon film is used for a base of NPN transistor and an emitter of a PNP transistor whereas the other doped polysilicon film is used for emitter of the NPN and a base of the PNP. The resulting base and emitter isolating structure is easy to fabricate, and self-aligned to the advantage of size reduction of individual devices.

REFERENCES:
patent: 4609568 (1986-09-01), Koh et al.
patent: 4764480 (1988-08-01), Vora
patent: 4980748 (1990-12-01), Hozumi et al.
patent: 4984053 (1991-01-01), Kayanuma
patent: 4994881 (1991-02-01), Gomi
patent: 5163178 (1992-11-01), Gomi et al.
patent: 5175607 (1992-12-01), Ikeda
patent: 5187554 (1993-02-01), Miwa
patent: 5232861 (1993-08-01), Miwa
patent: 5324672 (1994-06-01), Anmo et al.
"Vertical p-n-p for Complementary Bipolar Technology", Ingrid E. Magdo; (IEEE Journal of Solid State Circuits, vol. SC-15, No. 4, Aug. 1980).
"A sub-30psec Si Bipolar LSI Technology", Takayuki Gomi, et al.; (IEEE, International Electron Devices Meeting Technical Digest, pp. 744-747, Dec. 1988).
"An NPN 30GHz, PNP32GHz fT Complementary Bipolar Technology", Onai, et al. (IEEE, International Electron Devices Meeting Technical Digest, pp. 63-66; Dec. 1993).
"An NPN 30GHz, PNP 32 GHz ft Complementary Bipolar Technology"; Onai et al; (IEEE, IEDM 1993), Dec. 1993.
"Self-Aligned Complementary Bipolar Technology for Low-power . . . "; Onai et al; IEEE, vol. 42, No. 3, Mar. 1995.
"Process & Device Optimization of an Analog Complementary Bipolar IC . . . "; Yamaguchi et al; IEEE vol. 41, No. 6, Jun. 1994.

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