Patent
1990-06-27
1992-01-07
James, Andrew J.
357 16, 357 20, 357 32, 357 61, H01L 2714, H01L 2906, H01L 29161
Patent
active
050796100
ABSTRACT:
Photodetectors that produce detectivities close to the theoretical maximum detectivity include an electrically insulating substrate carrying a body of semiconductor material that includes a region of first conductivity type and a region of second conductivity type where the region of first conductivity type overlies and covers the junction with the region of second conductivity type and where the junction between the first and second regions separates minority carriers in the region of second conductivity type from majority carriers in the region of first conductivity type. These photodetectors produce high detectivities where radiation incident on the detectors has wavelengths in the range of about 1 to about 25 microns or more, particularly under low background conditions.
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"1-2 Micron (Hg, Cd)Te Photodetectors," by Alan N. Kohn et al, published in IEEE Transactions on Electron Devices, vol. ED-16, No. 10, Oct. 1969, p. 885.
Denson-Low W. K.
James Andrew J.
Ngo Ngan Van
Santa Barbara Research Center
Schubert W. C.
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