MOS type semiconductor device

Details MOS type semiconductor device MOS type semiconductor device

1990-12-19

1992-01-07

Wojciechowicz, Edward J.

357 15, 357 43, 357 55, 357 68, 357 234, H01L 2978

Patent

active

050796070

ABSTRACT:
A metal oxide semiconductor device comprising a semiconductor substrate having a semiconductor layer of a first conductivity type disposed thereon. A plurality of first regions of a second conductivity type are disposed on and embedded in a first surface of the semiconductor layer of the first conductivity type, and a plurality of second regions of the first conductivity type disposed on the first surface of the semiconductor layer between said first regions. In addition, a plurality of MOSFET structures are disposed on the surface of the semiconductor layer each structure comprising an insulating film disposed on the semiconductor layer extending over portions of two of the first regions and having an opening aligned with the second region disposed between said two first regions, a single crystal semiconductive layer of the second conductivity type disposed on the insulating film, one or more source regions of the first conductivity type disposed on and embedded the single crystal semiconductor layer, one or more drain regions of the first conductivity type disposed on and embedded the single crystal semiconductor layer at a location closer to the opening than said source region, a second insulating film disposed on the surface of the single crystal semiconductive layer, a gate electrode disposed on the insulating film, a first electrode making electrical contact between the drain region and the second region through an opening in the first insulating film, and a second electrode making electrical contact between the source region and the first region.

REFERENCES:
patent: 4809045 (1989-02-01), Yilmaz
IEEE, IEDM Technical Digest, 4 (1983) pp. 79 to 82, Dec. 1983.
IEEE, Trans. Electron. Devices, ED-31 (1984) pp. 1790 to 1795, Dec. 1984.
IEEE Trans. Electron. Devices, ED-32 (1985) p. 2554, Nov. 1985.
IEDM (1987 year International Electron Devices Meeting proceedings) p. 674, Dec. 1987.

Affiliated with

Also associated with

Rating

MOS type semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS type semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS type semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-825819