Thin-film memory element

Details Thin-film memory element Thin-film memory element

1990-01-19

1992-01-07

Hille, Rolf

357 2, 357 4, 357 235, H01L 2978

Patent

active

050796062

ABSTRACT:
A thin-film memory element made by the technique of forming thin film and functioning as a thin-film transistor. The memory element has two gate-insulating films, and two gate electrodes formed on the gate-insulating films, respectively. The first gate-insulating film can accumulate electrical charge, whereas the second gate-insulating film cannot. The gate electrode on the first gate-insulating film is used as write/erase electrode, and the gate electrode on the second gate-insulating film is used as read electrode. Since the memory element has two electrodes, one for writing or erasing data, and the other for reading data, its threshold voltage remains unchanged. Hence, data can be read from the thin-film memory element for a virtually indefinitely long period of time.

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