Patent
1986-12-03
1988-04-26
Edlow, Martin H.
357 2, 357 4, H01L 2904
Patent
active
047408294
ABSTRACT:
A semiconductor device comprises a polycrystalline semiconductor thin film layer comprising germanium atoms as a matrix and containing 3 atomic % or less of hydrogen atoms.
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Hirai Yutaka
Nakagiri Takashi
Osada Yoshiyuki
Canon Kabushiki Kaisha
Edlow Martin H.
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