Semiconductor element

Details Semiconductor element Semiconductor element

1974-05-24

1976-03-09

Tupman, W.

Metal working

Method of mechanical manufacture

Electrical device making

148185, 357 71, B01J 1700

Patent

active

039422445

ABSTRACT:
A semiconductor electrode is prepared by (a) contacting a semiconductor w a first contacting metal (capable of forming an alloy with the semiconductor), (b) contacting the first contacting metal with a ductile layer of a second contacting metal, (c) heating the resulting combination so as to form, simultaneously, a liquid phase between the semiconductor and the first contacting metal and between the first contacting metal and the ductile second contacting metal, however leaving intact a major portion of the ductile second contacting metal layer, and (d) cooling the thus obtained product whereby a solder contact which is resistant to load fluctuations can be readily made on the ductile layer with known semiconductor hard solder.

REFERENCES:
patent: 3436615 (1969-04-01), Finlayson
patent: 3492546 (1970-01-01), Rosvold
patent: 3523222 (1970-08-01), Jaeger
patent: 3562040 (1971-02-01), Garies

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