Semiconductor laser array

Coherent light generators – Particular active media – Semiconductor

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372 45, 372 46, 372 48, 372 97, 257 79, H01S 319

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active

RE0343560

ABSTRACT:
A semiconductor laser array includes a plurality of stripe-shaped stimulated regions of the index guide type. A plurality of buried layers are disposed between each of the plurality of stripe-shaped stimulated regions. A light absorption layer is formed in each of the plurality of stripe-shaped stimulated regions so that the stimulated region has the optical loss greater than an buried layer, whereby optical coupling is performed with no phase difference.

REFERENCES:
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patent: 4806994 (1989-02-01), Hayakawa et al.
patent: 4835783 (1989-05-01), Suyama et al.
Applied Physics Letters, vol. 44, No. 2, Jan. 1954, pp. 157-159, "Longitudinal-Mode Control in Integrated Semiconductor Laser Phased Arrays by Phase Velocity Matching".
Xerox Disclosure Journal, vol. 4, No. 3 May/Jun. 1979, pp. 357-358, "Improved Leaky Mode Buried Heterostructure (B.H.) Injection Lasers".
Applied Physics Letters, vol. 42, No. 2, Jan. 15, 1983, pp. 152-154, "Single Longitudinal Mode Operation of High Power Multiple-Stripe Injection Lasers".

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