Narrow divergence, single quantum well, separate confinement, al

Details Narrow divergence, single quantum well, separate confinement, al Narrow divergence, single quantum well, separate confinement, al

1989-10-30

1991-01-29

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

049892134

ABSTRACT:
A narrow divergence, single quantum well, separate confinement, AlGaAs laser of the type which includes the following sequentially grown epitaxial layers: (a) an n-AlGaAs cladding layer; (b) an AlGaAs waveguide layer; (c) a GaAs quantum well layer; (d) an AlGaAs waveguide layer; (e) a p-AlGaAs cladding layer; and is improved to provide a far-field angular divergence in the order of thirty degrees (30.degree.), full width at half maximum (FWHM) with a reduced threshold current temperature sensitivity for use in electronic imaging printers.

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"Explanation of Low T.sub.o Values in Short-Wavelength GaAs/AlGaAs Quantum Well Lasers", by P. Blood et al., Conference Digest 11th IEEE International Semiconductor Laser Conference, IEEE Catalog No. 88CH-2609-6, Aug. 29-Sep. 1, 1988, pp. 36-37.
"Influence of the Barriers in the Temperature Dependence of Threshold Current in GaAs/AlGaAs Quantum Well Lasers" by P. Blood et al., Journal of Quantum Electronics, vol. 25, No. 6, Jun. 1989, pp. 1459-1467.
"Temperature Dependence of Threshold Current for GaAs Quantum Well Diode Lasers", by P. S. Zory et al., Conference Digest 11th IEEE International Semiconductor Laser Conference, IEEE Catalog No. 88CH-2609-6, Aug. 29-Sep. 1, 1988, pp. 34-35.

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