High-frequency wireless communication system on a single ultrath

Details High-frequency wireless communication system on a single ultrath High-frequency wireless communication system on a single ultrath

1996-10-17

1999-03-16

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

257280, 257327, 257347, 257350, 257369, 257213, H01L 2972

Patent

active

058833960

ABSTRACT:
A high-frequency wireless communication system on a single ultrathin silicon on sapphire chip is presented. This system incorporates analog, digital (logic and memory) and high radio frequency circuits on a single ultrathin silicon on sapphire chip. The devices are fabricated using conventional bulk silicon CMOS processing techniques. Advantages include single chip architecture, superior high frequency performance, low power consumption and cost effective fabrication.

REFERENCES:
patent: 3562608 (1971-02-01), Gallagher et al.
patent: 3829881 (1974-08-01), Kohashi
patent: 4177084 (1979-12-01), Lau et al.
patent: 4198649 (1980-04-01), Berry
patent: 4385937 (1983-05-01), Ohmura
patent: 4418470 (1983-12-01), Naster et al.
patent: 4425700 (1984-01-01), Sasaki et al.
patent: 4463492 (1984-08-01), Maeguchi
patent: 4509990 (1985-04-01), Vasudev
patent: 4523963 (1985-06-01), Ohta et al.
patent: 4588447 (1986-05-01), Golecki
patent: 4607176 (1986-08-01), Burrows et al.
patent: 4615762 (1986-10-01), Jastrzebski et al.
patent: 4617066 (1986-10-01), Vasudev
patent: 4659392 (1987-04-01), Vasudev
patent: 4766482 (1988-08-01), Smeltzer et al.
patent: 4775641 (1988-10-01), Duffy et al.
patent: 4843448 (1989-06-01), Garcia et al.
patent: 5027171 (1991-06-01), Reedy et al.
patent: 5141882 (1992-08-01), Komori et al.
patent: 5229644 (1993-07-01), Wakai et al.
patent: 5294823 (1994-03-01), Eklund et al.
patent: 5300443 (1994-04-01), Shimabukuro et al.
patent: 5572040 (1996-11-01), Reedy et al.
Golecki et al., "Recrystallization of Silicon-on-Sapphire by CW Ar Laser Irradiation: Comparison Between the Solid and the Liquid-Phase Regimes"; Appl. Phys. Lett. 37(10), 1980, pp. 929-921.
Inoue et al. "Crystaline Disorder Reduction and Defect-Type Change in Silicon-on-Sapphire Films by Silicon Implantation and Subsequent Thermal Annealing"; Appl. Phys. Lett. 36(1), 1980, pp. 64-66.
Golecki et al., "Improvement of Crystalline Quality of Epitaxial Silicon-on-Sapphire by Ion-Implantation and Furnace Regrowth"; Solid State Electronics vol. 23, 1980, 803-806.
Linnros et al., "Ion-Beam Induced Epitaxial Regrowth of Amorphous Layers in Silicon on Sapphire"; Physical Review B, vol. 30, No. 7, 1984, pp. 3629-3638.
Lau et al., "Improvement of Crystalline Quality of Epitaxial Si Layers by Ion Implantation Techniques"; Appl. Phys. Lett. 34(1), 1979, pp. 76-78.
P.R. de la Houssaye, et al., "Fabrication of n-channel metal-oxide-semiconductor field-effect transistors with 0.2.mu.m gate lengths in 500 .ANG. thin film silicon on sapphire", Journal of Vacuum Science and Technology: Part B, vol. 10, No. 6, pp. 2954-2957, Nov./Dec. 1992.
P.H. Woerlee, et al., "Half-Micron CMOS on Ultra-Thin Silicon on Insulator", Technical Digest of the International Electron Devices Meeting 1989, Washington, D.C., pp. 821-824, Dec. 3-6, 1989.
Nobuo Sasaki et al., "A CMOS/SOS Synchronous Static RAM Fabricated with an Advanced SOS Technology", Japanese Journal of Applied Physics, Supplement 18-1, vol. 18, pp. 57-62, 1979.
Adele E. Schmitz et al., "A Deep-Submicrometer Microwave/Digital CMOS/SOS Technology", IEEE Electron Device Letters, vol. 12, No. 1, pp. 16-17, Jan. 1991.
Tsu-Jae King et al., "A Low-Temperature (.gtorsim.550.degree. C) Silicon-Germanium MOS Thin-Film Transistor Technology for Large-Area Electronics", Technical Digest of the International Electron Devices Meeting 1991, Washington, D.C., pp. 567-570, Dec. 8-11, 1991.
R.E. Reedy et al., "Characterization of Defect Reduction and Aluminum Redistribution in Silicon Implanted SOS Films", Journal of Crystal Growth, vol. 58, No. 1, pp. 53-60, Jun. 1982.
R.E. Reedy et al., "Suppressing Al Outdiffusion in Implantation Amorphized and Recrystallized Silicon on Sapphire Films", Applied Physics Letters, vol. 42, No. 8, pp. 707-709, Apr., 1983.
G.A. Garcia et al., "High-Quality CMOS on Thin (100 nm) Silicon on Sapphire", IEEE Electron Device Letters, vol. 9, No. 1, pp. 32-34, Jan. 1988.
R.E. Reedy et al., "Thin (100 nm) SOS for Application to Beyond VLSI Microelectonics", Mat. Res. Soc. Symp. Proc., vol. 107, pp. 365-376, 1988.

Affiliated with

Also associated with

Rating

High-frequency wireless communication system on a single ultrath does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-frequency wireless communication system on a single ultrath, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-frequency wireless communication system on a single ultrath will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-819771