Non-volatile static RAM cell with enhanced conduction insulators

Details Non-volatile static RAM cell with enhanced conduction insulators Non-volatile static RAM cell with enhanced conduction insulators

1980-09-30

1983-08-16

Fears, Terrell W.

Static information storage and retrieval

Floating gate

Particular biasing

357 23, G11C 1140

Patent

active

043995225

ABSTRACT:
This invention provides improved non-volatile semiconductor memories which include a volatile latch circuit having a data node and first and second cross-coupled transistors, at least one of the transistors has first and second control gates, a floating gate and an enhanced conduction insulator or dual electron injector structure disposed between the first control gate and the floating gate. The second control gate is connected to the storage node. A control voltage source is connected to the first control gate for transferring charge between the enhanced conduction insulator or dual electron injector structure and the data node.

REFERENCES:
patent: 3676717 (1972-07-01), Lockwood
patent: 3728695 (1973-04-01), Bentchkowsky
patent: 4095281 (1978-06-01), Denes
patent: 4103348 (1978-07-01), Fagan
patent: 4122541 (1978-10-01), Uchida
patent: 4128773 (1978-12-01), Troutman et al.
patent: 4175290 (1979-11-01), Harari
patent: 4207615 (1980-06-01), Mar
patent: 4217601 (1980-08-01), Dekeersmaecker et al.
"High Current Injection into SiO.sub.2 from Si Rich SiO.sub.2 Films and Experimental Applications" by D. J. DiMaria et al., J. Appl. Pys. 51(5), May 1980, pp. 2722-2735.
"Electrically-Alterable Memory Using a Dual Electron Injector Structure" by D. J. DiMaria et al., IEEE Electron Device Letters, vol. EDL-1, No. 9, Sep. 1980, pp. 179-181.

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