Fast switching lateral insulated gate transistors

Details Fast switching lateral insulated gate transistors Fast switching lateral insulated gate transistors

1988-11-22

1991-01-29

Carroll, J.

357 6, 357 15, 357 20, 357 231, 357 41, 357 51, 357 86, H01L 2978, H01L 2702

Patent

active

049890581

ABSTRACT:
A lateral insulated gate transistor includes both a surface-adjoining drain region and a surface-adjoining anode region in an epitaxial surface layer. An anode-drain electrode is connected to the anode region and coupled to the drain region. In one embodiment of the device, the drain and anode regions are in direct contact, and the anode-drain electrode directly contacts both regions. In a second embodiment, the anode region is provided in a high-doped surface-adjoining region rather than in direct contact with the drain region, and the anode-drain electrode is coupled to the drain region through a resistive element. A third embodiment employs a Schottky contact connected to the anode-drain electrode. Lateral isolated gate rectifiers in accordance with the invention offer the advantages of low "on" resistance, high breakdown voltage and fast switching characteristics.

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R. Jayaraman et al., "Comparison of High Voltage Devices for Power Integrated Airwater", DEDM 84 pp. 258-260.
S. Colak et al., "Lateral DMOS Power Trademark Design" IEEE Electron Review Letters, Oct. EDL-1 (Apr. 1980) pp. 51-53.

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