Tailorable infrared sensing device with strain layer superlattic

Details Tailorable infrared sensing device with strain layer superlattic Tailorable infrared sensing device with strain layer superlattic

1987-11-25

1989-06-27

James, Andrew J.

357 30, 357 13, 357 61, H01L 2712

Patent

active

048434396

ABSTRACT:
An infrared photodetector is formed of a heavily doped p-type Ge.sub.x Si.sub.1-x /Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cut-off will occur.

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