Method of producing a Schottky gate field effect transistor

Details Method of producing a Schottky gate field effect transistor Method of producing a Schottky gate field effect transistor

1988-10-17

1989-06-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 39, 437912, 357 22, 357 15, 148DIG100, H01L 2128

Patent

active

048430242

ABSTRACT:
A method of producing a Schottky gate field effect transistor includes depositing a dummy gate film on a semiconductor substrate, depositing a second thin film on the semiconductor substrate and on the first thin film pattern to the same thickness as the first thin film, applying a photoresist on the second thin film of sufficient thickness to obtain a flat surface, etching the photoresist and second film at the same etching speed to expose the dummy gate film, removing the dummy gate film, and depositing a gate metal in place of the dummy gate film.

REFERENCES:
patent: 4455738 (1984-06-01), Houston et al.
patent: 4532004 (1985-07-01), Akiyama et al.
patent: 4569119 (1986-02-01), Terada et al.
patent: 4601095 (1986-07-01), Kikuchi et al.
patent: 4694563 (1987-07-01), Kikuchi
patent: 4745082 (1988-05-01), Kwok

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