Method of controlling base contact regions by forming a blocking

Details Method of controlling base contact regions by forming a blocking Method of controlling base contact regions by forming a blocking

1981-09-28

1983-08-16

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 148188, 156643, 357 34, 357 91, H01L 21263, H01L 21225, H01L 2120

Patent

active

043989624

ABSTRACT:
A method of manufacturing a semiconductor device includes a step of forming a film doped with an emitter impurity on a predetermined surface area of a semiconductor layer. An ion implantation blocking layer is formed to cover the top and side surfaces of the doped film and the exposed surface of the semiconductor layer. Then, the blocking layer is anisotropically etched by irradiating it with a dry etchant in a direction substantially normal to the semiconductor layer. The anisotropic etching is carried out until the top surface of the doped film is substantially exposed, thereby allowing a portion of the blocking layer to leave surrounding the doped film and also substantially forming a base contact hole defined by the exposed side surface of the remaining blocking layer. Subsequently, ion implantation is conducted against the semiconductor layer with the remaining blocking layer used as a mask, to form at least a base contact region of a high impurity concentration in a portion of the semiconductor layer corresponding to the base contact hole.

REFERENCES:
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patent: 4209350 (1980-06-01), Ho et al.
patent: 4211582 (1980-07-01), Horng et al.
patent: 4234362 (1980-11-01), Riseman
patent: 4243435 (1981-01-01), Barile et al.
patent: 4279671 (1981-07-01), Komatsu
patent: 4318751 (1982-03-01), Horng
Technical Digest of 1979 International Electron Devices Meeting, Session 14.4, "An Advanced PSA Process for High Speed Bipolar VLSI"; Ishida et al. Dec. 1979.

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