Method of forming a copper film by chemical vapor deposition

Details Method of forming a copper film by chemical vapor deposition Method of forming a copper film by chemical vapor deposition

1988-02-08

1989-06-27

Childs, Sadie

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, 427252, 437245, B05D 306, C23C 1606

Patent

active

048428914

ABSTRACT:
A copper film is formed by bringing the vapor of an inorganic compound of copper, such as cuprous nitrate that vaporizes upon heating, into contact with a reducing gas in the reaction chamber, so that copper ions are reduced into metal copper that is to be deposited on a substrate. The obtained copper film exhibits very good step coverage and contains very little impurities, lending itself well for forming interconnections of a semiconductor device that has a high degree of integration.

REFERENCES:
patent: 3911194 (1975-10-01), Dejachy et al.
patent: 3914472 (1975-10-01), Nakanishi et al.
patent: 3949122 (1976-04-01), Lepetit et al.
patent: 4526624 (1985-07-01), Tombrello et al.

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