Electro-optical device incorporating a peripheral dual gate elec

Details Electro-optical device incorporating a peripheral dual gate elec Electro-optical device incorporating a peripheral dual gate elec

1997-03-04

1998-10-06

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257350, 257270, 257 69, H01L 29788

Patent

active

058180702

ABSTRACT:
A thin file transistor (TPT) has first (lower) and second (upper) gate electrodes which are provide respectively above and under a semiconductor active layer and first and second insulating films (which serve as gate insulating films) provided respectively between the first gate electrode and a semiconductor layer and between a second gate electrode and the semiconductor layer. The second gate electrode has an anodic oxide film made of a material constituting the gate electrode on the upper and side surfaces thereof formed by anodization. Also, a silicide region is provided by covering the source/drain regions of the TFT with a silicide and changing a part of the region into a silicide.

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