Method for making thin film field effect transistors

Metal working – Method of mechanical manufacture – Assembling or joining

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29578, 29580, H01L 21363

Patent

active

043983405

ABSTRACT:
A method for making thin film field effect transistors that utilize a semnductor material that is altered by acid etching and providing steps for producing the transistors such that the semiconductor material is protected from the acid solutions and therefore preventing the semiconductor material from being altered in the process of making the transistors.

REFERENCES:
patent: 3258663 (1966-06-01), Wiemer
patent: 3470610 (1969-10-01), Breitweiser
patent: 3520051 (1970-07-01), Topfer et al.
patent: 3616527 (1971-11-01), Janning
patent: 4252580 (1981-02-01), Messick
patent: 4331758 (1982-05-01), Luo
patent: 4372032 (1983-02-01), Collins et al.

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